DocumentCode
2566806
Title
An 8Gb/s Transformer-Boosted Transmitter with >V/sub 00/ swing
Author
Jintae Kim ; Hatamkhani, H. ; Chih-Kong Ken Yang
Author_Institution
California Univ., Los Angeles, CA
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
283
Lastpage
292
Abstract
An 8 Gb/s serial-link transmitter that achieves >VDD signal swing without stressing the voltage tolerance of the transistors is presented. The high-frequency signal is boosted to large swings above the supply rail through multiple transformer coupling. The design is implemented in 1.2V 0.13mum CMOS technology. The prototype TX achieves 1.42VPP output swing with 1.16V on-chip VDD and draws 136mA. The S11 is less than -10dB for frequencies <4GHz
Keywords
CMOS integrated circuits; radio transmitters; 0.13 micron; 1.16 V; 1.2 V; 1.42 V; 136 mA; 8 Gbit/s; CMOS technology; high-frequency signal; multiple transformer coupling; serial-link transmitter; signal swing; Boosting; Electrostatic discharge; Impedance; Inductance; Inductors; Mutual coupling; Parasitic capacitance; Resistors; Transmitters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696058
Filename
1696058
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