• DocumentCode
    2566806
  • Title

    An 8Gb/s Transformer-Boosted Transmitter with >V/sub 00/ swing

  • Author

    Jintae Kim ; Hatamkhani, H. ; Chih-Kong Ken Yang

  • Author_Institution
    California Univ., Los Angeles, CA
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    283
  • Lastpage
    292
  • Abstract
    An 8 Gb/s serial-link transmitter that achieves >VDD signal swing without stressing the voltage tolerance of the transistors is presented. The high-frequency signal is boosted to large swings above the supply rail through multiple transformer coupling. The design is implemented in 1.2V 0.13mum CMOS technology. The prototype TX achieves 1.42VPP output swing with 1.16V on-chip VDD and draws 136mA. The S11 is less than -10dB for frequencies <4GHz
  • Keywords
    CMOS integrated circuits; radio transmitters; 0.13 micron; 1.16 V; 1.2 V; 1.42 V; 136 mA; 8 Gbit/s; CMOS technology; high-frequency signal; multiple transformer coupling; serial-link transmitter; signal swing; Boosting; Electrostatic discharge; Impedance; Inductance; Inductors; Mutual coupling; Parasitic capacitance; Resistors; Transmitters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696058
  • Filename
    1696058