DocumentCode :
2566833
Title :
T1 Design of integrated RF front-ends in submicron and deep submicron CMOS technologies
Author :
Long, J.
Author_Institution :
Tech. Univ. Delft, Delft
fYear :
2007
fDate :
22-25 Oct. 2007
Firstpage :
8
Lastpage :
8
Abstract :
Summary form only given. The design of front-end electronics in CMOS technology are described in this presentation. Both low-voltage/low-power and high performance aspects of front-ends for highly-integrated radio transceivers are treated, using low-noise amplifier, power amplifier driver, mixer and voltage-controlled oscillator blocks as examples. In addition, the limitations and advantages of on-chip passive components in RF circuits, which are important to low-voltage circuits suitable for integration in advanced CMOS technologies, are included. Single-chip narrowband (e.g., Bluetooth, 802.11x), ultrawideband/broadband and multi-standard transceiver applications will be highlighted.
Keywords :
CMOS integrated circuits; low noise amplifiers; mixers (circuits); power amplifiers; transceivers; voltage-controlled oscillators; 802.11x; Bluetooth; RF circuits; broadband applications; deep submicron CMOS technologies; front-end electronics; highly-integrated radio transceivers; integrated RF front-ends; low-noise amplifier; multi-standard transceiver applications; onchip passive components; power amplifier driver; single-chip narrowband; ultrawideband applications; voltage-controlled oscillator blocks; Broadband amplifiers; CMOS technology; Driver circuits; High power amplifiers; Integrated circuit technology; Low-noise amplifiers; Radio frequency; Radio transceivers; Radiofrequency amplifiers; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
Type :
conf
DOI :
10.1109/ICASIC.2007.4415549
Filename :
4415549
Link To Document :
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