T1 Design of integrated RF front-ends in submicron and deep submicron CMOS technologies

Author

Long, J.

Author_Institution

Tech. Univ. Delft, Delft

fYear

2007

fDate

22-25 Oct. 2007

Firstpage

8

Lastpage

8

Abstract

Summary form only given. The design of front-end electronics in CMOS technology are described in this presentation. Both low-voltage/low-power and high performance aspects of front-ends for highly-integrated radio transceivers are treated, using low-noise amplifier, power amplifier driver, mixer and voltage-controlled oscillator blocks as examples. In addition, the limitations and advantages of on-chip passive components in RF circuits, which are important to low-voltage circuits suitable for integration in advanced CMOS technologies, are included. Single-chip narrowband (e.g., Bluetooth, 802.11x), ultrawideband/broadband and multi-standard transceiver applications will be highlighted.

Keywords

CMOS integrated circuits; low noise amplifiers; mixers (circuits); power amplifiers; transceivers; voltage-controlled oscillators; 802.11x; Bluetooth; RF circuits; broadband applications; deep submicron CMOS technologies; front-end electronics; highly-integrated radio transceivers; integrated RF front-ends; low-noise amplifier; multi-standard transceiver applications; onchip passive components; power amplifier driver; single-chip narrowband; ultrawideband applications; voltage-controlled oscillator blocks; Broadband amplifiers; CMOS technology; Driver circuits; High power amplifiers; Integrated circuit technology; Low-noise amplifiers; Radio frequency; Radio transceivers; Radiofrequency amplifiers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2007. ASICON '07. 7th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4244-1132-0

Electronic_ISBN

978-1-4244-1132-0

Type

conf

DOI

10.1109/ICASIC.2007.4415549

Filename

4415549