Title :
Complementary GaAs JFET 16 K SRAM
Author :
Vogelsang, C.H. ; Castro, J.A. ; Notthoff, J.K. ; Troeger, G.L. ; Stephens, J.S. ; Krein, R.B.
Author_Institution :
McDonnell Douglas Astronaut. Co., Huntington Beach, CA, USA
Abstract :
A complementary GaAs JFET 16 K SRAM (static random-access memory) with a 4 K*4 organization has been designed, fabricated, and tested. Full functionality of this device has been verified with the GALPAT and marching surround-by-complement patterns. With the surround-by-complement pattern, a worst bit read access time of 22.5 ns has been measured with an average bit access time of 16.1 ns at 678-mW total power dissipation at room temperature. A wafer probe yield of 3% has been obtained.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated memory circuits; junction gate field effect transistors; random-access storage; 16 kbit; 16.1 to 22.5 ns; 678 mW; GALPAT; GaAs; JFET; SRAM; access time; marching surround-by-complement patterns; power dissipation; room temperature; semiconductors; static random-access memory; worst bit read access time; yield 3%; Circuit testing; Extraterrestrial measurements; Gallium arsenide; JFET circuits; Logic devices; MESFETs; Power dissipation; Power measurement; Random access memory; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11027
