• DocumentCode
    2567226
  • Title

    Signal-Margin-Screening for Multi-Mb MRAM

  • Author

    Honigschmid, H. ; Beer, P. ; Bette, A. ; Dittrich, R. ; Gardic, R. ; Gogl, D. ; Lammers, S. ; Schmid, J. ; Altimime, L. ; Bournat, S. ; Muller, Gunter

  • Author_Institution
    Infineon, Munich
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    467
  • Lastpage
    476
  • Abstract
    As MRAM technology is maturing, the need for developing a strategy to identify and replace marginal bits during read/write operation becomes necessary. The methodology and circuit techniques for read/write signal-margin screening implemented in a 0.18mum 16Mb MRAM design, are described. The methodology leads to increased read/write signal margins resulting in fully functional dice by applying a wafer-level screen test including half select disturb pattern
  • Keywords
    integrated circuit design; magnetoresistive devices; random-access storage; 0.18 micron; MRAM; half select disturb pattern; signal margin screening; wafer level screen test; Calibration; Circuits; Clamps; Diodes; Magnetoresistance; Mirrors; Random access memory; Read-write memory; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696079
  • Filename
    1696079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2567226