مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

2567396

Title :

DRAM and TCAM

fYear :

2006

fDate :

6-9 Feb. 2006

Firstpage :

525

Lastpage :

526

Keywords :

Bandwidth; Content addressable storage; Cyclic redundancy check; Damping; Delay; Graphics; Jitter; Random access memory; SDRAM; Semiconductor device noise;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International

Conference_Location :

San Francisco, CA

ISSN :

0193-6530

Print_ISBN :

1-4244-0079-1

Type :

conf

DOI :

10.1109/ISSCC.2006.1696088

Filename :

1696088

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2567396