DocumentCode :
2567760
Title :
A new design of mixed-voltage I/O buffers with low-voltage-thin-oxide CMOS process
Author :
Liu, Guijiang ; Wang, Yuan ; Jia, Song
Author_Institution :
Peking Univ., Beijing
fYear :
2007
fDate :
22-25 Oct. 2007
Firstpage :
201
Lastpage :
204
Abstract :
A novel circuit of mixed-voltage I/O buffer is proposed in this work. The new buffer uses NMOS driver transistors instead of PMOS-driver, which is commonly used in the prior designs. With the help of a bootstrapped circuit, the buffer is free of the threshold voltage loss problem originated from NMOS driver. The proposed buffer can overcome the problem of leakage current paths and gate-oxide reliability issue. Simulation results show that the new buffer operates successfully when used in 1.8 V/3.3 V I/O interface.
Keywords :
CMOS integrated circuits; MOSFET; bootstrap circuits; buffer circuits; driver circuits; leakage currents; semiconductor device reliability; I-O interface; NMOS driver transistors; PMOS-driver; bootstrapped circuit; gate-oxide reliability; leakage current path; low-voltage-thin-oxide CMOS process; mixed-voltage I-O buffer; threshold voltage loss; Atherosclerosis; CMOS process; Driver circuits; Inverters; Leakage current; MOS devices; MOSFETs; Microelectronics; Power supplies; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
Type :
conf
DOI :
10.1109/ICASIC.2007.4415602
Filename :
4415602
Link To Document :
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