Title :
InGaAs/AlInAs HEMT technology for millimeter wave applications
Author :
Mishra, U.K. ; Brown, A.S.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
AlInAs-GaInAs modulation-doped structures grown by MBE (molecular-beam epitaxy) on InP substrates have demonstrated excellent electronic and optical properties. Extremely high sheet charge densities (n/sub S/ approximately 5*10/sup 18/ cm/sup -3/) and room temperature mobilities ( mu approximately 9500 cm/sup 2/ V/sup -1/ s/sup -1/) have been achieved. 0.1- mu m-gate-length HEMTs (high-electron-mobility transistors) have exhibited an f/sub t/ (unity current gain cutoff frequency) approximately 170 GHz, whereas single stage amplifiers using 0.2- mu m-gate HEMTs have demonstrated a minimum noise figure of 0.8 dB and an associated gain of 8.7 dB. Ring oscillators have demonstrated 6-ps switching speeds and static frequency dividers operated at 26.7 GHz at room temperature.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; counting circuits; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; molecular beam epitaxial growth; oscillators; semiconductor technology; substrates; 0.1 to 0.2 micron; 0.8 dB; 170 GHz; 26.7 GHz; 6 ps; 8.7 dB; AlInAs-GaInAs; EHF; HEMT technology; HEMTs; InP substrates; MBE; MIMIC; MM-waves; MMIC; electronic properties; gain; gate lengths; high-electron-mobility transistors; millimeter wave; modulation-doped structures; molecular-beam epitaxy; noise figure; optical properties; ring oscillators; room temperature; room temperature mobilities; room temperature operation; semiconductors; sheet charge densities; single stage amplifiers; static frequency dividers; switching speeds; unity current gain cutoff frequency; Epitaxial layers; HEMTs; Indium gallium arsenide; Indium phosphide; Millimeter wave technology; Millimeter wave transistors; Molecular beam epitaxial growth; Optical modulation; Substrates; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11032
