Title :
Millimeter-wave noise parameters of high-performance HEMTs at 300 K and 17 K
Author :
Weinreb, S. ; Harris, R. ; Rothman, M.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
Measurements at 43 GHz of the four noise parameters of very low-noise HEMTs (high-electron-mobility transistors) fabricated at several laboratories are reported. The measurements are facilitated by tunable waveguide-to-microstrip transitions which present known variable generator and load impedances to the device under test and are operable over a wide range of temperatures.<>
Keywords :
electron device noise; high electron mobility transistors; solid-state microwave devices; 17 K; 300 K; 43 GHz; high-performance HEMTs; load impedances; mm-wave noise; noise parameters; tunable waveguide-to-microstrip transitions; HEMTs; Impedance measurement; Laboratories; MODFETs; Millimeter wave measurements; Millimeter wave transistors; Noise measurement; Temperature distribution; Testing; Waveguide transitions;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38847
