Title :
Possibility of silicon monolithic millimeterwave integrated circuits
Author :
Campbell, S.A. ; Gopinath, A.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon-germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies. The tradeoffs available to operate this device at millimeter-wave frequencies are discussed, and calculations indicate that the fabrication of silicon monolithic millimeter-wave integrated circuits is a genuine possibility.<>
Keywords :
MMIC; elemental semiconductors; heterojunction bipolar transistors; silicon; Si; Si-Ge; heterojunction bipolar transistors; microstrip line dielectric losses; monolithic millimeterwave integrated circuits; three-terminal device; Conductivity; Dielectric losses; Dielectric materials; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Monolithic integrated circuits; Schottky diodes; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38848
