Title :
A 12 GHz-band monolithic HEMT low-noise amplifier
Author :
Ayaki, N. ; Inoue, A. ; Katoh, T. ; Komaru, M. ; Noda, M. ; Kobiki, M. ; Nagahama, K. ; Tanino, N.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A 12-GHz-band two-stage monolithic HEMT (high-electron-mobility transistor) low-noise amplifier has been developed. The HEMT used in the amplifier has a gate length of 0.5 mu m and shows a typical noise figure of 1.0 dB at 12-GHz. The noise figure of the amplifier is less than 1.7 dB with an associated gain over 15.0 dB in the frequency range from 11.7 to 12.7 GHz. The input VSWR (voltage standing-wave ratio) is less than 1.9 and the output VSWR is less than 1.5. These results suggest that the HEMT MMIC (monolithic microwave integrated circuit) has promising applicability for microwave low-noise amplification.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; 0.5 micron; 1.7 dB; 11.7 to 12.7 GHz; 15 dB; HEMT MMIC; LNA; SHF; VSWR; frequency range; gain; high-electron-mobility transistor; monolithic HEMT low-noise amplifier; monolithic microwave integrated circuit; noise figure; semiconductors; Frequency; Gain; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11034
