A 12 GHz-band monolithic HEMT low-noise amplifier

Author

Ayaki, N. ; Inoue, A. ; Katoh, T. ; Komaru, M. ; Noda, M. ; Kobiki, M. ; Nagahama, K. ; Tanino, N.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

101

Lastpage

104

Abstract

A 12-GHz-band two-stage monolithic HEMT (high-electron-mobility transistor) low-noise amplifier has been developed. The HEMT used in the amplifier has a gate length of 0.5 mu m and shows a typical noise figure of 1.0 dB at 12-GHz. The noise figure of the amplifier is less than 1.7 dB with an associated gain over 15.0 dB in the frequency range from 11.7 to 12.7 GHz. The input VSWR (voltage standing-wave ratio) is less than 1.9 and the output VSWR is less than 1.5. These results suggest that the HEMT MMIC (monolithic microwave integrated circuit) has promising applicability for microwave low-noise amplification.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; 0.5 micron; 1.7 dB; 11.7 to 12.7 GHz; 15 dB; HEMT MMIC; LNA; SHF; VSWR; frequency range; gain; high-electron-mobility transistor; monolithic HEMT low-noise amplifier; monolithic microwave integrated circuit; noise figure; semiconductors; Frequency; Gain; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11034

Filename

11034