Title :
A monolithic 3 to 40 GHz HEMT distributed amplifier
Author :
Yuen, C. ; Nishimoto, C. ; Glenn, M. ; Pao, Y.C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A monolithic 3-to-40-GHz distributed amplifier has been developed using 0.25- mu m HEMTs (high-electron-mobility transistors) with mushroom gate profile, as an active device. This amplifier consists of five 0.25- mu m HEMTs with variable gate widths and on-chip biasing circuit. The chip size is 2.3*0.8 mm. A measured gain of 8 dB from 3 to 33 GHz and a measured midband noise figure of 3 dB from 10 to 30 GHz were achieved. The authors note that these are the best reported results for an amplifier over this bandwidth.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 0.25 micron; 0.8 to 2.3 mm; 3 dB; 3 to 40 GHz; 8 dB; EHF; HEMT distributed amplifier; MMIC; SHF; chip size; gain; high-electron-mobility transistors; mushroom gate profile; noise figure; on-chip biasing circuit; semiconductors; variable gate widths; wideband amplifiers; Broadband amplifiers; Distributed amplifiers; Equivalent circuits; Gain measurement; Gallium arsenide; HEMTs; Noise figure; Noise measurement; Performance gain; Semiconductor device measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11035
