Title :
2 to 42 GHz flat gain monolithic HEMT distributed amplifiers
Author :
Gamand, P. ; Deswarte, A. ; Wolny, M. ; Meunier, J.-C. ; Chambery, P.
Author_Institution :
Lab. d´´Electron. et de Phys. Appl., Limeil-Brevannes, France
Abstract :
Ultrawide band monolithic HEMT (high-electron-mobility transistor) amplifiers have been designed and fabricated using MOVPE (metalorganic vapor-phase epitaxy) heterostructures. A cascode configuration has been used to reduce the coupling effects and therefore to improve the frequency bandwidth of the amplifier. A 6+or-1-dB gain was obtained from 2 to 42 GHz. In particular, a gain ripple better than +or-0.5 dB up to 26.5 GHz was measured directly on wafer. The I/O VSWRs (voltage standing wave ratios) are less than 2.5 over the entire bandwidth. The average noise figure of the amplifier is 4.2 at 12 GHz, rising to 5.2 at 18 GHz. The chip size is 2.3*0.9 mm/sup 2/. It is concluded that the results show that monolithic microwave integrated circuits using HEMTs are very promising for MM-wave applications.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 2 to 42 GHz; 4.2 to 5.2 dB; 5 to 7 dB; EHF; MM-wave applications; MMIC; MOVPE; SHG; broadband operation; cascode configuration; flat gain; heterostructures; high-electron-mobility transistor; metalorganic vapor-phase epitaxy; monolithic HEMT distributed amplifiers; monolithic microwave integrated circuits; ultrawide band type; Bandwidth; Distributed amplifiers; Epitaxial growth; Epitaxial layers; Frequency; Gain measurement; HEMTs; MODFETs; Particle measurements; Semiconductor device measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11036
