A switching-band CMOS low-noise amplifier for 6–11GHz MB-OFDM UWB wireless radio system

Author

Huang, Zhe-Yang ; Huang, Che-Cheng

Author_Institution

Nat. Chiao Tung Univ., Hsin-Chu

fYear

2007

fDate

22-25 Oct. 2007

Firstpage

411

Lastpage

414

Abstract

This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 mum . Simulation results show that power gain of 12.4 dB, input and output matching lower then - 8.5 dB and - 14.5 dB, and a minimum NF of 4.0 dB can be achieved, while the power consumption is 11.2 mW through 1.8 V power supply.

Keywords

CMOS integrated circuits; OFDM modulation; low noise amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; radiocommunication; ultra wideband communication; LNA design; RF CMOS process; frequency 6 GHz to 11 GHz; gain 12.4 dB; multiband -OFDM UWB system; orthogonal frequency division multiplexing; power 11.2 mW; power consumption; size 0.18 mum; switching-band CMOS low-noise amplifier; ultra-wideband wireless radio system; voltage 1.8 V; wideband amplifier design; Broadband amplifiers; CMOS technology; Capacitors; Communication switching; Energy consumption; Impedance matching; Low-noise amplifiers; Noise figure; Radio frequency; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2007. ASICON '07. 7th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4244-1132-0

Electronic_ISBN

978-1-4244-1132-0

Type

conf

DOI

10.1109/ICASIC.2007.4415654

Filename

4415654