DocumentCode
2568650
Title
A Self-Resonant MEMS-based Electrostatic Field Sensor with 4V/m/Hz Sensitivity
Author
Denison, Tim ; Jinbo Kuang ; Shafran, J. ; Judy, Mohsen ; Lundberg, Kent
Author_Institution
Medtronic, Fridley, MN
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
1121
Lastpage
1130
Abstract
An electric-field sensor is presented for applications such as xerography. The sensor architecture combines a vibrating MEMS structure with synchronous detection-based electronics. Prototyped in a MEMS process, the noise floor is 4.0V/m/radicHz and the INL is 20V/m over a range of +/-700kV/m, an order-of-magnitude improvement over existing MEMS devices
Keywords
electric fields; electric sensing devices; electrophotography; micromechanical resonators; electric-field sensor; electrostatic field sensor; self-resonant MEMS; sensor architecture; synchronous detection-based electronics; vibrating MEMS structure; xerography applications; Circuits; Electrostatics; Feedback; Force sensors; Geophysical measurements; Micromechanical devices; Resonance; Resonant frequency; Sensor arrays; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696157
Filename
1696157
Link To Document