DocumentCode
2568718
Title
A 200dB Dynamic Range Iris-less CMOS Image Sensor with Lateral Overflow Integration Capacitor using Hybrid Voltage and Current Readout Operation
Author
Akahane, Nana ; Ryuzaki, Rie ; Adachi, Satoru ; Mizobuchi, Koichi ; Sugawa, Shigetoshi
Author_Institution
Tohoku Univ., Sendai
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
1161
Lastpage
1170
Abstract
A 2.6times2.6mm2 image sensor fabricated in 0.35mum 2P3M CMOS contains 64times64 pixels with 20times20mum2 pixel size and has an extended dynamic range of over 200dB. This DR is equivalent to the incident light ranging from about 10-2 to 108 lx with the lens iris fixed
Keywords
CMOS image sensors; capacitive sensors; readout electronics; 0.35 micron; 2P3M CMOS; extended dynamic range; hybrid voltage-current readout operation; iris-less CMOS image sensor; lateral overflow integration capacitor; CMOS image sensors; Capacitors; Dynamic range; Image coding; Mirrors; Noise cancellation; Switches; Switching circuits; Turning; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696161
Filename
1696161
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