DocumentCode
2568732
Title
A Back-Illuminated High-Sensitivity Small-Pixel Color CMOS Image Sensor with Flexible Layout of Metal Wiring
Author
Iwabuchi, S. ; Maruyama, Y. ; Ohgishi, Y. ; Muramatsu, M. ; Karasawa, Nobuhiro ; Hirayama, Takatsugu
Author_Institution
SONY, Atsugi
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
1171
Lastpage
1178
Abstract
A 1.3Mpixel color image sensor with a back-illuminated configuration and 3.45mum square pixels is fabricated in 0.25mum 1P3M CMOS. Its sensitivity at a wavelength of 550nm is 34% better than that of a conventional device, and it falls by only 15% when the light is incident at an angle of 20 degrees. Flexibility in metal wiring layout improves device characteristics such as saturation output
Keywords
CMOS image sensors; wiring; 0.25 micron; 1P3M CMOS; 3.45 micron; 550 nm; back-illuminated configuration; color image sensor; metal wiring layout; small-pixel color CMOS image sensor; CMOS image sensors; Computational Intelligence Society; Degradation; Digital cameras; Image quality; Optical saturation; Optical sensors; Pixel; Silicon; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696162
Filename
1696162
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