DocumentCode
2568836
Title
A 5.4GHz 0.35/spl mu/m BiCMOS FBAR Resonator Oscillator in Above-IC Technology
Author
Aissi, M. ; Tournier, E. ; Dubois, M.-A. ; Parat, Guy ; Plana, R.
Author_Institution
LAAS-CNRS, Toulouse
fYear
2006
fDate
6-9 Feb. 2006
Firstpage
1228
Lastpage
1235
Abstract
A 5.4GHz 0.35mum BiCMOS SiGe FBAR oscillator is presented. The FBAR resonator is directly integrated above the silicon IC, thus eliminating the bond wires and associated parasitics of the classical FBAR oscillators. The oscillator achieves a phase noise of -117.7dBc/Hz at 100kHz offset from 5.46GHz carrier frequency while the oscillator core draws 1.7mA from 2.7V
Keywords
BiCMOS integrated circuits; Ge-Si alloys; acoustic resonators; oscillators; silicon; 0.35 micron; 1.7 mA; 100 kHz; 2.7 V; 5.4 GHz; 5.46 GHz; BiCMOS oscillator; SiGe; bond wires; carrier frequency; film bulk acoustic wave resonator; integrated circuit technology; parasitics; phase noise; silicon integrated circuit; BiCMOS integrated circuits; Capacitance; Capacitors; Film bulk acoustic resonators; Filters; Oscillators; Phase noise; Piezoelectric films; Radio frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0079-1
Type
conf
DOI
10.1109/ISSCC.2006.1696169
Filename
1696169
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