Title :
Performance of a 2-18 GHz ultra low-noise amplifier module
Author :
Niclas, K.B. ; Pereira, R.R.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
Abstract :
The performance of two-tier matrix amplifiers optimized for best noise figure across the 2-18-GHz band is discussed. Previous efforts resulted in degradation of other performance parameters, especially for ultra wideband operation. The present approach used a frequency-dependent gate termination to overcome this problem. An average noise figure of 2.95 dB with an associated average gain of 19.2 dB was measured in a single-stage module using MESFETs.<>
Keywords :
Schottky gate field effect transistors; microwave amplifiers; solid-state microwave circuits; 19.2 dB; 2 to 18 GHz; 2.95 dB; MESFETs; frequency-dependent gate termination; noise figure; single-stage module; two-tier matrix amplifiers; ultra low-noise amplifier module; Broadband amplifiers; Circuit noise; Degradation; Frequency; Gain measurement; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Resistors;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38853
