Title :
Direct-coupled amplifier using AlGaAs/GaAs ballistic collection transistors (BCTs)
Author :
Yamauchi, Yoshiki ; Ishibashi, Tadao
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
The authors report on a direct-coupled amplifier using AlGaAs/GaAs heterojunction bipolar transistors with near-ballistic collection structure, called ballistic collection transistors (BCTs). The amplifier consists of two BCTs without level-shift diodes. With this simplified circuit configuration, an excellent performance of 12-dB gain with an 8.5-GHz bandwidth was obtained. It is concluded that the results clearly demonstrate that BCTs are very promising devices for high-gain, wideband amplifiers.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; solid-state microwave circuits; wideband amplifiers; 12 dB; 8.5 GHz; AlGaAs-GaAs; BCTs; III-V semiconductors; ballistic collection transistors; circuit configuration; direct-coupled amplifier; heterojunction bipolar transistors; high-gain; microwave circuits; near-ballistic collection structure; wideband amplifiers; Bandwidth; Broadband amplifiers; Circuits; Current density; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Performance gain; Power supplies; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11039
