Title :
A 2.5 GHz low phase noise LC VCO in 0.35μm SiGe BiCMOS technology
Author :
Han, Bin ; Wu, Jianhui ; Hu, Chen
Author_Institution :
Southeast Univ., Nanjing
Abstract :
A fully integrated low phase noise LC VCO with tail resistor for current control is presented using 0.35 mum SiGe BiCMOS technology. The structure is used to reduce noise of tail current source. The VCO has a tuning range of 480 MHz, from 2.32 GHz to 2.8 GHz and achieves low phase noise of -104.3 dBc/Hz and -124.3 dBc/Hz at 100 kHz and 1 MHz offset frequency from 2.5 GHz carrier. The oscillator draws 5 mA from 5 V supply voltage. The figure-of-merit (FOM) value at 2.5 GHz is around -178 dBc/Hz at the offset frequency of 100 kHz.
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; phase noise; voltage-controlled oscillators; BiCMOS technology; FOM value; current control; figure-of-merit value; frequency 2.32 GHz to 2.8 GHz; low phase noise LC VCO; reduce noise; size 0.35 mum; tail current source; voltage 5 V; BiCMOS integrated circuits; Current control; Frequency; Germanium silicon alloys; Noise reduction; Phase noise; Resistors; Silicon germanium; Tail; Voltage-controlled oscillators;
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
DOI :
10.1109/ICASIC.2007.4415689
