Title :
A low-power true random number generator using random telegraph noise of single oxide-traps
Author :
Brederlow, Ralf ; Prakash, Ramesh ; Paulus, Christian ; Thewes, Roland
Author_Institution :
Infineon, Munich
Abstract :
A true random number generator is realized by utilizing the noise produced by single oxide traps in small-area MOSFETs in combination with built-in redundancy. The circuit has an area of 0.009mm2 in 0.12mum CMOS and consumes 50muW at 200kb/s random output data. The concept is robust against environmental noise and supply-voltage variations and is thus suitable for operation within security controllers
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; random number generation; redundant number systems; 0.12 micron; 200 kbit/s; CMOS integrated circuit; built-in redundancy; low-power random number generator; random telegraph noise; single oxide-traps; small-area MOSFET; true random number generator; Circuit noise; Frequency; Integrated circuit noise; Low-frequency noise; MOSFETs; Noise generators; Random number generation; Telegraphy; Voltage; Working environment noise;
Conference_Titel :
Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-4244-0079-1
DOI :
10.1109/ISSCC.2006.1696222
