• DocumentCode
    2569694
  • Title

    A low-power true random number generator using random telegraph noise of single oxide-traps

  • Author

    Brederlow, Ralf ; Prakash, Ramesh ; Paulus, Christian ; Thewes, Roland

  • Author_Institution
    Infineon, Munich
  • fYear
    2006
  • fDate
    6-9 Feb. 2006
  • Firstpage
    1666
  • Lastpage
    1675
  • Abstract
    A true random number generator is realized by utilizing the noise produced by single oxide traps in small-area MOSFETs in combination with built-in redundancy. The circuit has an area of 0.009mm2 in 0.12mum CMOS and consumes 50muW at 200kb/s random output data. The concept is robust against environmental noise and supply-voltage variations and is thus suitable for operation within security controllers
  • Keywords
    CMOS integrated circuits; MOSFET; low-power electronics; random number generation; redundant number systems; 0.12 micron; 200 kbit/s; CMOS integrated circuit; built-in redundancy; low-power random number generator; random telegraph noise; single oxide-traps; small-area MOSFET; true random number generator; Circuit noise; Frequency; Integrated circuit noise; Low-frequency noise; MOSFETs; Noise generators; Random number generation; Telegraphy; Voltage; Working environment noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0079-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.2006.1696222
  • Filename
    1696222