A high precision CMOS bandgap reference

Author

Pan, Kaiyang ; Wu, Jianhui ; Wang, Pei

Author_Institution

Southeast Univ., Nanjing

fYear

2007

fDate

22-25 Oct. 2007

Firstpage

692

Lastpage

695

Abstract

A high precision bandgap reference is presented. An exponential curvature compensation technique, which exploits the Ic-Vbe temperature characteristic of BJTs, is used to reduce the temperature coefficient (TC). A pre-regulator circuit is adopted to enhance the PSRR (power supply rejection ratio) performance. The bandgap uses the current mode approach to generate a reference voltage around 500 mV. With the conventional first-order compensation, the temperature coefficient is 14.6 ppm/degC over the range from -40degC to 85degC. Due to curvature compensation, an improved temperature drift of 7.04 ppm/degC is obtained. The PSRR of the reference voltage achieves 120 dB at low frequency.

Keywords

CMOS integrated circuits; compensation; reference circuits; voltage regulators; current mode approach; enhanced PSRR performance; exponential curvature compensation; high precision CMOS bandgap reference; improved temperature drift; pre-regulator circuit; reference voltage; temperature characteristic; temperature coefficient; Application specific integrated circuits; Operational amplifiers; Photonic band gap; Power engineering and energy; Power supplies; Regulators; Systems engineering and theory; Temperature distribution; Voltage; Voltage-controlled oscillators; Bandgap Reference; Compensation; Curvature; Voltage Regulator;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2007. ASICON '07. 7th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4244-1132-0

Electronic_ISBN

978-1-4244-1132-0

Type

conf

DOI

10.1109/ICASIC.2007.4415725

Filename

4415725