DocumentCode
2569771
Title
Study of the influence of temperature on the behavior of the VDMOS transistor
Author
LALLEMENT, Chr ; Bouchakour, R.
Author_Institution
Dept. Electron., Telecom Paris, France
Volume
2
fYear
1993
fDate
27-30 Sep 1993
Firstpage
235
Abstract
This paper presents an accurate one-dimensional device model for the simulation of power MOSFET transistors, taking into account the effects of temperature as an interactive variable during simulation
Keywords
digital simulation; electronic engineering computing; microcomputer applications; power MOSFET; power engineering computing; semiconductor device models; software packages; ASTEC; SABER; VDMOS transistor; computer simulation; interactive variable; one-dimensional device model; power MOSFET; temperature effects; Circuit simulation; FETs; Inductance; MOSFET circuits; Parasitic capacitance; Power MOSFET; SPICE; Temperature sensors; Thermal resistance; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, INTELEC '93. 15th International
Conference_Location
Paris
Print_ISBN
0-7803-1842-0
Type
conf
DOI
10.1109/INTLEC.1993.388567
Filename
388567
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