Title :
Study of the influence of temperature on the behavior of the VDMOS transistor
Author :
LALLEMENT, Chr ; Bouchakour, R.
Author_Institution :
Dept. Electron., Telecom Paris, France
Abstract :
This paper presents an accurate one-dimensional device model for the simulation of power MOSFET transistors, taking into account the effects of temperature as an interactive variable during simulation
Keywords :
digital simulation; electronic engineering computing; microcomputer applications; power MOSFET; power engineering computing; semiconductor device models; software packages; ASTEC; SABER; VDMOS transistor; computer simulation; interactive variable; one-dimensional device model; power MOSFET; temperature effects; Circuit simulation; FETs; Inductance; MOSFET circuits; Parasitic capacitance; Power MOSFET; SPICE; Temperature sensors; Thermal resistance; Threshold voltage;
Conference_Titel :
Telecommunications Energy Conference, INTELEC '93. 15th International
Conference_Location :
Paris
Print_ISBN :
0-7803-1842-0
DOI :
10.1109/INTLEC.1993.388567
