Title :
A 1- mu m MODFET process yielding MUX and DMUX circuits operating at 4.5 Gb/s
Author :
Lin, Barry J. F. ; Luechinger, H. ; Kocot, C.P. ; Littau, E. ; Stout, C. ; McFarland, B. ; Rohdin, H. ; Kofol, J.S. ; Jaeger, R.P. ; Mars, D.E.
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA, USA
Abstract :
The authors report a high-yield 1- mu m enhancement- and depletion-mode MODFET (E/D MODFET) process capable of producing medium-scale integrated circuits. Special care has been taken to reduce anomalous transients. Reproducible MBE (molecular-beam epitaxy) growth of epi-layers and a uniform and reproducible RIE (reactive ion etch) process have resulted in excellent threshold voltage (V/sub TH/) control. The standard deviation of V/sub TH/ for EFETs with a median V/sub TH/ value of 0.27 V was 42 mV from wafer to wafer and 21 mV across a wafer. With this process the authors have demonstrated a stand-alone general-purpose 8-bit multiplexer and demultiplexer pair operating at 4.5 Gb/s with a power consumption of 1.4 W and 2.2 W, respectively.<>
Keywords :
digital integrated circuits; field effect integrated circuits; high electron mobility transistors; integrated circuit technology; molecular beam epitaxial growth; sputter etching; 0.27 V; 1 micron; 1.4 W; 2.2 W; 4.5 Gbit/s; DMUX circuits; MBE growth; MODFET; MSI; MUX circuits; depletion mode process; medium-scale integrated circuits; molecular-beam epitaxy; multiplexer/demultiplexer pair; power consumption; reactive ion etch; reproducible RIE; threshold voltage control; Doping; Etching; FETs; Gallium arsenide; HEMTs; MODFET circuits; MODFET integrated circuits; Mars; Passivation; Threshold voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11044
