AR/02 Gas Pressure Dependence of Atomic Components of Zirconia Prepared by Intermittent Zirconium Arc PBII&D

Author

Yukimura, Ken ; Ono, H. ; Nakamura, Kentaro ; Sasaki, Motoharu

Author_Institution

Dept. of Electr. Eng., Doshisha Univ., Kyotanabe

fYear

2005

fDate

20-23 June 2005

Firstpage

225

Lastpage

225

Abstract

Summary form only given. In this work, a zirconium oxide film was prepared using intermittent zirconium cathodic arc discharge at a repetition rate of 0.25 Hz. The plasma-based ion implantation and deposition (PBII&D) method was employed for the zirconia film preparation. The Ar/O₂ gas pressure dependence of atomic components of zirconia is investigated and related to the plasma density.

Keywords

arcs (electric); plasma density; plasma deposited coatings; plasma deposition; plasma immersion ion implantation; zirconium compounds; Ar-O₂; Ar-O₂ gas pressure; ZrO₂; atomic components; frequency 0.25 Hz; intermittent zirconium arc PBII&D; plasma density; plasma deposition; plasma-based ion implantation; zirconium cathodic arc discharge; zirconium oxide film; Argon; Etching; Frequency; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma simulation; Plasma sources; Space vector pulse width modulation; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2005. ICOPS '05. IEEE Conference Record - Abstracts. IEEE International Conference on

Conference_Location

Monterey, CA

ISSN

0730-9244

Print_ISBN

0-7803-9300-7

Type

conf

DOI

10.1109/PLASMA.2005.359279

Filename

4198538