A high frequency GaAs multivibrator IC

Author

Kobayashi, M. ; Tanino, N. ; Komaru, M. ; Shimura, T. ; Noda, M. ; Ishibara, O.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

151

Lastpage

154

Abstract

In an optical disk system, a high-frequency laser diode modulator has been required to reduce the optical feedback noise. A GaAs multivibrator IC has been developed for this requirement. The IC includes a multivibrator, a buffered amplifier, and a laser driver. All these circuits are designed using the same common-drain configuration for monolithic integration in a chip size of 1.3*10 mm/sup 2/. The IC oscillates in the frequency range of 560+or-40 MHz with a power output range of 5+or-1 dBm. A noise reduction of over 6 dB was obtained by applying the IC to the optical disk system.<>

Keywords

III-V semiconductors; digital integrated circuits; driver circuits; field effect integrated circuits; gallium arsenide; laser accessories; multivibrators; optical disc storage; optical modulation; oscillators; semiconductor junction lasers; video and audio discs; 520 to 600 MHz; GaAs; buffered amplifier; common-drain configuration; high frequency; laser diode modulator; laser driver; monolithic integration; multivibrator IC; optical disk system; optical feedback noise reduction; semiconductor laser; Frequency; Gallium arsenide; Integrated circuit noise; Noise reduction; Optical buffering; Optical feedback; Optical modulation; Optical noise; Photonic integrated circuits; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11046

Filename

11046