A highly integrated monolithic X-Ku band upconverter

Author

Ali, F. ; Moghe, S. ; Ramachandran, R.

Author_Institution

Pacific Monolithics Inc., Sunnyvale, CA, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

157

Lastpage

160

Abstract

The authors describe a monolithic upconverter with a high level of integration (87 components) operating in the X-Ku bands. It consists of a two-stage RF amplifier; a broadband, transformer-coupled, double-balanced Schottky diode mixer; and a two-stage LO (local oscillator) buffer amplifier. The chip measures only 96 mil*48 mil. The upconverter IC, packaged along with MMIC (monolithic microwave-integrated-circuit) amplifiers, has been tested at different LO frequencies between 8-15 GHz with a swept IF from 200 MHz to 1.5 GHz, and typically has 10 dB of conversion gain for upconverted output across the 8-16.5-GHz band.<>

Keywords

MMIC; frequency convertors; 10 dB; 200 MHz to 1.5 GHz; 8 to 15 GHz; Ku-band; MMIC; Schottky diode mixer; X-band; broadband; buffer amplifier; double-balanced; local oscillator; monolithic microwave-integrated-circuit; monolithic upconverter; swept IF; transformer-coupled; two-stage LO; two-stage RF amplifier; upconverter IC; Broadband amplifiers; Integrated circuit packaging; Local oscillators; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Radiofrequency amplifiers; Schottky diodes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11047

Filename

11047