Title :
Noise characterization uncertainty of microwave devices under low current operation
Author :
Lucero, R. ; Moyer, C. ; Vaitkus, R. ; Dydyk, M.
Author_Institution :
Motorola Phoenix Corp. Res. Lab., Tempe, AZ, USA
Abstract :
An automated source reflection coefficient synthesizer combined with a mechanical output tuner was used in conjunction with gage capability studies for the characterization of the noise parameters of GaAs MESFETs and planar-doped pseudomorphic MODFETS operating at low currents (I/sub ds/<1 mA). The net repeatability and reproducibility (99% confidence interval for the test) of the measurement system were established at +or-0.2 dB and +or-1.4 DB for the minimum noise figure and associated gain, respectively.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric noise measurement; electron device noise; gallium arsenide; high electron mobility transistors; microwave measurement; solid-state microwave devices; 0.5 to 1 mA; GaAs; MESFETs; automated source reflection coefficient synthesizer; gage capability; gain; low current operation; mechanical output tuner; microwave devices; minimum noise figure; noise parameters; planar-doped pseudomorphic MODFETS; Acoustic reflection; Gallium arsenide; HEMTs; MESFETs; MODFETs; Microwave devices; Reproducibility of results; Synthesizers; Tuners; Uncertainty;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38866
