Title :
A wide band distributed dual gate HEMT mixer
Author :
La Con, M. ; Nakano, K. ; Dow, G.S.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
The authors present the systematic design, fabrication, and evaluation of a distributed wideband monolithic mixer using dual-gate HEMTs (high-electron-mobility transistors). The circuit was fabricated on an Al-GaAs-GaAs heterostructure wafer. The measurement results show that the mixer operates from 5 to 18 GHz with a conversion loss from 3 to 5 dB. This is believed to be the first reported wideband distributed mixer using dual-gate HEMT devices. The mixer chips developed are key components for EW (electronic warfare) applications.<>
Keywords :
MMIC; electronic warfare; field effect integrated circuits; high electron mobility transistors; military equipment; mixers (circuits); 3 to 5 dB; 5 to 18 GHz; Al-GaAs-GaAs heterostructure wafer; EW applications; MMIC; SHF; conversion loss; distributed mixer; dual gate HEMT; electronic warfare; fabrication; high-electron-mobility transistors; systematic design; wideband monolithic mixer; Circuit simulation; Dielectric substrates; Fabrication; Gallium arsenide; HEMTs; MIM capacitors; Mixers; Semiconductor device measurement; Ultra wideband technology; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11051
