A wide band distributed dual gate HEMT mixer

Author

La Con, M. ; Nakano, K. ; Dow, G.S.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

173

Lastpage

176

Abstract

The authors present the systematic design, fabrication, and evaluation of a distributed wideband monolithic mixer using dual-gate HEMTs (high-electron-mobility transistors). The circuit was fabricated on an Al-GaAs-GaAs heterostructure wafer. The measurement results show that the mixer operates from 5 to 18 GHz with a conversion loss from 3 to 5 dB. This is believed to be the first reported wideband distributed mixer using dual-gate HEMT devices. The mixer chips developed are key components for EW (electronic warfare) applications.<>

Keywords

MMIC; electronic warfare; field effect integrated circuits; high electron mobility transistors; military equipment; mixers (circuits); 3 to 5 dB; 5 to 18 GHz; Al-GaAs-GaAs heterostructure wafer; EW applications; MMIC; SHF; conversion loss; distributed mixer; dual gate HEMT; electronic warfare; fabrication; high-electron-mobility transistors; systematic design; wideband monolithic mixer; Circuit simulation; Dielectric substrates; Fabrication; Gallium arsenide; HEMTs; MIM capacitors; Mixers; Semiconductor device measurement; Ultra wideband technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11051

Filename

11051