Title :
A 4 bit full Nyquist 1 Gsample/s monolithic GaAs ADC with on-chip S/H and error correction
Author :
Nguyen, Thin ; Thomas, F. ; Ruggeri, S. ; Le Paih, M. ; Uro, J.M. ; Debrie, F. ; Dean, T. ; Gloanec, M.
Author_Institution :
Thomson Hybrides & Microondes, DAG, Orsay, France
Abstract :
A 4-bit D-MESFET GaAs ADC (analog/digital converter) has been designed, processed, and tested. The circuit has a flash structure and includes an original false-state-corrector circuit. A sample and hold has been placed at the quantizer input to improve high-speed acquisition. The circuit includes no more than 1200 active components on a 2-mm*2-mm area. From the first run, it has demonstrated full functionality at low frequencies with a 50% yield in the best cases. It has shown the capability to work with a 999-MHz sinewave input at a 1-GHz sample rate. Proper linearity results have been obtained on real full Nyquist measurements at a 500-MHz clock rate.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; error correction; field effect integrated circuits; gallium arsenide; 1 GHz; 4 bit; 500 MHz; GaAs; analog/digital converter; clock rate; depletion mode MESFET; error correction; false-state-corrector circuit; flash structure; high-speed acquisition; monolithic ADC; onchip sample/hold arrangement; real full Nyquist measurements; sample rate; Bandwidth; Circuits; Dielectric thin films; Error correction; Fabrication; Frequency; Gallium arsenide; Metallization; Resistors; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11056
