DocumentCode
2570750
Title
A 2Gs/s HBT sample and hold
Author
Poulton, K. ; Kang, J.S. ; Corcoran, J.J. ; Wang, K.-C. ; Asbeck, P.M. ; Chang, M.-C.F. ; Sullivan, G.
Author_Institution
Hewlett-Packard Lab., Palo Alto, CA, USA
fYear
1988
fDate
6-9 Nov. 1988
Firstpage
199
Lastpage
202
Abstract
The authors describe a Schottky-diode sample-and-hold (S/H) circuit fabricated in an AlGaAs-GaAs heterojunction bipolar transistor (HBT) process. The transistors exhibit an f/sub T/ of over 50 GHz. The S/H circuit operates at up to 2G samples/s, with distortion below-40 dBc up to and beyond the Nyquist input frequency of 1 GHz.<>
Keywords
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; sample and hold circuits; 50 GHz; AlGaAs-GaAs; HBT; III-V semiconductors; S/H circuit; Schottky-diode; heterojunction bipolar transistor; sample/hold circuit; Analog-digital conversion; Circuits; Etching; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Scattering parameters; Schottky diodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location
Nashville, Tennessee, USA
Type
conf
DOI
10.1109/GAAS.1988.11057
Filename
11057
Link To Document