Title :
Monolithic high-voltage FET power amplifiers
Author :
Peterson, K.E. ; Hung, H.-L. ; Phelleps, F.R. ; Noble, T.F. ; Huang, H.C.
Author_Institution :
COMSAT Lab., Clarksburgh, MD, USA
Abstract :
High-voltage field-effect transistor (HVFET) power amplifiers offer improved system efficiency through reduced DC power distribution loss and more efficient DC power conditioning. Results are presented for the first such monolithic microwave integrated circuit (MMIC) amplifiers and four-cell amplifiers at X-band. Drain bias voltages up to 40 V have been achieved with such amplifiers. It is expected that this technique will lead to improved DC-to-RF conversion efficiency in satellite transponders by allowing an electronic power conditioner to be eliminated or replaced by a simple voltage regulator.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; 40 V; DC power conditioning; DC power distribution loss; DC-to-RF conversion efficiency; MMIC amplifiers; X-band; drain bias voltages; efficiency; four-cell amplifiers; monolithic HV FET power amplifiers; satellite transponders; voltage regulator; Distributed amplifiers; High power amplifiers; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave amplifiers; Microwave integrated circuits; Power conditioning; Power distribution; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38878
