Monolithic high-voltage FET power amplifiers

Author

Peterson, K.E. ; Hung, H.-L. ; Phelleps, F.R. ; Noble, T.F. ; Huang, H.C.

Author_Institution

COMSAT Lab., Clarksburgh, MD, USA

fYear

1989

fDate

13-15 June 1989

Firstpage

945

Abstract

High-voltage field-effect transistor (HVFET) power amplifiers offer improved system efficiency through reduced DC power distribution loss and more efficient DC power conditioning. Results are presented for the first such monolithic microwave integrated circuit (MMIC) amplifiers and four-cell amplifiers at X-band. Drain bias voltages up to 40 V have been achieved with such amplifiers. It is expected that this technique will lead to improved DC-to-RF conversion efficiency in satellite transponders by allowing an electronic power conditioner to be eliminated or replaced by a simple voltage regulator.<>

Keywords

MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; 40 V; DC power conditioning; DC power distribution loss; DC-to-RF conversion efficiency; MMIC amplifiers; X-band; drain bias voltages; efficiency; four-cell amplifiers; monolithic HV FET power amplifiers; satellite transponders; voltage regulator; Distributed amplifiers; High power amplifiers; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave amplifiers; Microwave integrated circuits; Power conditioning; Power distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1989., IEEE MTT-S International

Conference_Location

Long Beach, CA, USA

Type

conf

DOI

10.1109/MWSYM.1989.38878

Filename

38878