Increasing Microprocessor Speed by Massive Application of On-Die High-K MIM Decoupling Capacitors

Author

Sánchez, Héctor ; Johnstone, Bill ; Roberts, Doug ; Mandhana, Om ; Melnick, Brad ; Celik, Muhsin ; Baker, Mike ; Hayden, Jim ; Min, Byoung ; Edgerton, John ; White, Bruce

Author_Institution

Freescale Semicond., Austin, TX

fYear

2006

fDate

6-9 Feb. 2006

Firstpage

2190

Lastpage

2199

Abstract

A 90nm SOI microprocessor with massive application of high-k MIM decoupling capacitor modules is proven to increase the maximum frequency of the processor by close to 10%. Simulations predict reduced power supply noise leading to improvements in Fmax by close to the equivalent of a transistor node increase. Simulations of applying MIM decoupling capacitors to high-speed I/O and PLL circuits show that they can further enhance performance and area requirements for these critical circuits in advanced technologies

Keywords

MIM devices; capacitors; microprocessor chips; phase locked loops; silicon-on-insulator; 90 nm; SOI microprocessor; high-speed I/O circuit; on-die high-k MIM decoupling capacitors; phase locked loop circuits; power supply noise; Circuit noise; Circuit simulation; Frequency; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Microprocessors; Noise reduction; Power supplies; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ISSCC 2006. Digest of Technical Papers. IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

1-4244-0079-1

Type

conf

DOI

10.1109/ISSCC.2006.1696280

Filename

1696280