DocumentCode :
2570775
Title :
A technique for the maintenance of FET power amplifier efficiency under backoff
Author :
Geller, B.D. ; Assal, F.T. ; Gupta, R.K. ; Cline, P.K.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
fYear :
1989
fDate :
13-15 June 1989
Firstpage :
949
Abstract :
An operational technique for FET power amplifiers which allows the maintenance of high efficiency as the amplifier is backed off from its rated output power level is described. Using this technique, an experimental single-state 1-W C-band amplifier, capable of 65% power-added efficiency at its rated output power, maintains a minimum efficiency of 55% for a 10-dB output backoff range. Comparable amplifiers operating under conventional Class B or Class A demonstrate efficiencies of about 18% and 4%, respectively. An analytic basis for the technique is given. Experimental results are also presented for a three-stage, 2-W C-band amplifier.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; power integrated circuits; 1 W; 2 W; 55 percent; 65 percent; C-band amplifier; FET power amplifier efficiency; backoff; output power level; power-added efficiency; three-stage amplifier; Degradation; FETs; High power amplifiers; Laboratories; Operational amplifiers; Phased arrays; Power amplifiers; Power generation; Radio frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
Type :
conf
DOI :
10.1109/MWSYM.1989.38879
Filename :
38879
Link To Document :
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