Recrystallized silicon-on-alumina as a monolithic circuit technology

A microwave monolithic technology based on zone-melt recrystallization (ZMR) of silicon films on alumina substrates using a phosphosilicate glass (PSG) buffer layer is described. While initial recrystallization results confirm the difficulty of obtaining device-quality films with a thermally mismatched substrate, the planarity and viscoelastic strain relief introduced by the PSG indicate that the technology should be feasible. A surface-oriented p-i-n diode device structure has been developed which is compatible with the recrystallized silicon films. Results obtained with this process using single-crystal substrates demonstrate the feasibility of the device structure. The potential of high-power monolithic control circuits is discussed. This technology particularly attractive for phased-array antenna modules from 1 to 5 GHz.<>