Ultra-low-noise millimeter-wave pseudomorphic HEMTs

Devices based on AlGaAs-InGaAs-GaAs pseudomorphic HEMTs (high electron mobility transistors) with 0.1- mu m gate length have produced record low-noise performance at 43 GHz. The devices are optimized for low noise figure and low sensitivity to both temperature and circuit matching. The room temperature device noise figure is measured to be 1.32 dB (noise temperature=103 K) with 6.7 dB associated gain. At 17 K physical temperature, the noise figure is 0.36 dB (noise temperature=25 K) with 6.9 dB associated gain. The 43-GHz device results show significant promise for applications in ultra-broad-bandwidth and ultra-low-noise systems.<>