Analytical model of GaAs MESFET output conductance

Author

Lam, S.C.F. ; Canfield, P.C. ; McCamant, A.J. ; Allstot, D.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

fYear

1988

fDate

6-9 Nov. 1988

Firstpage

203

Lastpage

206

Abstract

An analytical model of GaAs MESFET output conductance with frequency- and temperature-dependent parameters has been developed. The accuracy of the model was tested by comparing the simulated results with actual data of devices with low pinch-off voltage. The results showed considerable improvement when compared with the simple Curtice model. It is concluded that since the simple analytical expressions are easily incorporated into standard MESFET circuit simulation programs such as SPICE, this model helps to overcome a major impediment to the design of precision GaAs analog and digital ICs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; MESFET output conductance; SPICE; analogue ICs; analytical model; circuit simulation programs; digital ICs; frequency dependent parameters; low pinch-off voltage; temperature-dependent parameters; Analytical models; Data engineering; Digital circuits; Electron traps; Frequency dependence; Gallium arsenide; MESFETs; Scattering; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Conference_Location

Nashville, Tennessee, USA

Type

conf

DOI

10.1109/GAAS.1988.11058

Filename

11058