Title :
A true off-set self-aligned process for high efficiency Ku-band power FETs
Author :
Wakamoto, K. ; Imura, K. ; Yamamoto, M. ; Shimoyama, S. ; Kameyama, T. ; Isomae, M. ; Okubo, Y. ; Ohoka, M. ; Nagashima, T. ; Figueredo, D.A. ; McCarty, L.H. ; Su, C.-Y. ; Yam, M. ; Kakihana, S.
Author_Institution :
Nippon Mining Co., Saitama, Japan
Abstract :
A novel offset self-aligned process has been used to fabricate an internally matched power FET with a 2-*3000- mu m gate width which at 14 GHz has produced 34.4-dBm output power, 6-dB gain, and 32% power-added efficiency at the -1 dB gain compression point with a power combining efficiency of approximately=96%. The high combining efficiency is attributed to the close parameter match of the self-aligned power FETs. In this process, the source, gate, and drain openings are defined simultaneously. The source-gate self-alignment permits a relatively shallow gate recess (0-600 AA), which preserves the uniformity of the active layer. The self-aligned gate-drain spacing results in a large and uniform gate-drain breakdown voltage which is especially important for power applications.<>
Keywords :
Schottky gate field effect transistors; power transistors; semiconductor technology; solid-state microwave devices; 14 GHz; 2 micron; 32 percent; 6 dB; 96 percent; Ku-band; MESFET; SHF; high efficiency; internally matched device; microwave device; offset self-aligned process; power FETs; power combining efficiency; power-added efficiency; source-gate self-alignment; uniform gate-drain breakdown voltage; Annealing; Etching; FETs; Fabrication; Gain; Gallium arsenide; Implants; Lithography; Mining industry; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38896