Title :
Zero bias GaInAs MISFET mixers
Author :
Chang, K.W. ; Epstein, B.R. ; Denlinger, E.J. ; Gardner, P.D.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
The authors report the experimental results on an X-band, passive, switch-type, single-ended mixer using a metal-insulator-semiconductor field-effect transistor (MISFET) fabricated from Ga/sub 0.47/In/sub 0.53/As. The device operated without any applied DC drain or gate bias. A third-order input intercept point as high as +30 dBm was obtained with +20 dBm LO (local oscillator) input power. Also presented are harmonic balance simulations of the mixer circuit.<>
Keywords :
III-V semiconductors; field effect transistor circuits; gallium arsenide; indium compounds; insulated gate field effect transistors; mixers (circuits); solid-state microwave circuits; Ga/sub 0.47/In/sub 0.53/As; III-V semiconductors; MISFET mixers; SHF; X-band; field-effect transistor; harmonic balance simulations; microwave circuits; single-ended mixer; switch-type; zero bias operation; Band pass filters; Circuit simulation; Dynamic range; FETs; Gallium arsenide; Impedance; MESFETs; MISFETs; Radio frequency; Switches;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38897
