Title :
An improved large-signal I–V model of GaN HEMT
Author :
Zhou, Hui ; Xu, Yuehang ; Feng, Lin
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
Abstract :
A new large-signal I-V model for GaN HEMT is presented in this paper based on the operational principle of devices and the traditional Angelov nonlinear I-V model. The least squares method and genetic algorithm are used to optimize the parameter extraction, and MATLAB is used to realize it. The simulation result fits well with the measured data, and the extracted model parameters have certain physical significance, which shows the improved large-signal I-V model has good accuracy.
Keywords :
genetic algorithms; high electron mobility transistors; Angelov nonlinear I-V model; HEMT; MATLAB; genetic algorithm; large signal I-V model; least squares method; operational principle; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Solid modeling; Angelov nonlinear I–V model; GaN; HEMT; genetic algorithm; large-signal I–V model;
Conference_Titel :
Computational Problem-Solving (ICCP), 2012 International Conference on
Conference_Location :
Leshan
Print_ISBN :
978-1-4673-1696-5
Electronic_ISBN :
978-1-4673-1695-8
DOI :
10.1109/ICCPS.2012.6384267
