DocumentCode
2571500
Title
An improved large-signal I–V model of GaN HEMT
Author
Zhou, Hui ; Xu, Yuehang ; Feng, Lin
Author_Institution
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
fYear
2012
fDate
19-21 Oct. 2012
Firstpage
284
Lastpage
286
Abstract
A new large-signal I-V model for GaN HEMT is presented in this paper based on the operational principle of devices and the traditional Angelov nonlinear I-V model. The least squares method and genetic algorithm are used to optimize the parameter extraction, and MATLAB is used to realize it. The simulation result fits well with the measured data, and the extracted model parameters have certain physical significance, which shows the improved large-signal I-V model has good accuracy.
Keywords
genetic algorithms; high electron mobility transistors; Angelov nonlinear I-V model; HEMT; MATLAB; genetic algorithm; large signal I-V model; least squares method; operational principle; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Solid modeling; Angelov nonlinear I–V model; GaN; HEMT; genetic algorithm; large-signal I–V model;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Problem-Solving (ICCP), 2012 International Conference on
Conference_Location
Leshan
Print_ISBN
978-1-4673-1696-5
Electronic_ISBN
978-1-4673-1695-8
Type
conf
DOI
10.1109/ICCPS.2012.6384267
Filename
6384267
Link To Document