Title :
InP-to-Si wafer heterobonding for optical MEMs
Author :
Pasquariello, Donato ; Camacho, Martin ; Hjort, Klas
Author_Institution :
Angstrom Lab., Uppsala Univ., Sweden
Abstract :
Summary form only given. We evaluate hydrophilic and hydrophobic surface pre-treatments in InP-to-Si direct wafer bonding. Surface roughness and surface chemistry was examined using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After bonding, the bonded interfaces were evaluated using infrared transmission imaging, bond-strength and current-voltage (I-V) measurements
Keywords :
III-V semiconductors; X-ray photoelectron spectra; atomic force microscopy; indium compounds; integrated circuit technology; integrated circuit testing; micro-optics; micromechanical devices; wafer bonding; AFM; I-V measurements; IR transmission imaging; InP; InP-to-Si direct wafer bonding; InP-to-Si wafer heterobonding; Si; X-ray photoelectron spectroscopy; XPS; atomic force microscopy; bond-strength; bonded interfaces; current-voltage measurements; hydrophilic surface pre-treatments; hydrophobic surface pre-treatments; infrared transmission imaging; optical MEMs; surface chemistry; surface roughness; Atom optics; Atomic force microscopy; Atomic measurements; Chemistry; Photoelectron microscopy; Rough surfaces; Spectroscopy; Surface roughness; Wafer bonding; X-ray imaging;
Conference_Titel :
Optical MEMS, 2000 IEEE/LEOS International Conference on
Conference_Location :
Kauai, HI
Print_ISBN :
0-7803-6257-8
DOI :
10.1109/OMEMS.2000.879625
