Title :
A novel model for an integrated rf CMOS schottky diode
Author :
Wang, Xi-Ning ; Zhu, Bin ; Su, Jian-Kun ; Lee, Ting-Huang ; Yang, Li-wu
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai
Abstract :
In this paper an interdigital n-type CoSi2-Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.05 GHz to 8.5 GHz. A type of four stages charge pump is designed using this new Schottky diode model, the design charge pump can get efficiency of 40%.
Keywords :
CMOS integrated circuits; Schottky diodes; UHF integrated circuits; integrated circuit modelling; microwave integrated circuits; semiconductor device models; CoSi2-Si; frequency 0.05 GHz to 8.5 GHz; integrated SMIC 0.18 mum RF CMOS process; interdigital n-type CoSi2-Si Schottky diode; metal plate; parasitic capacitance dielectric; size 0.18 mum; CMOS process; Charge pumps; Dielectric losses; Dielectric measurements; Frequency measurement; Parasitic capacitance; Radio frequency; Schottky diodes; Semiconductor device modeling; Voltage; Modeling; RF CMOS; RFID; Schottky diode;
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
DOI :
10.1109/ICASIC.2007.4415834
