A novel model for an integrated rf CMOS schottky diode

Author

Wang, Xi-Ning ; Zhu, Bin ; Su, Jian-Kun ; Lee, Ting-Huang ; Yang, Li-wu

Author_Institution

Semicond. Manuf. Int. Corp., Shanghai

fYear

2007

fDate

22-25 Oct. 2007

Firstpage

1138

Lastpage

1141

Abstract

In this paper an interdigital n-type CoSi₂-Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.05 GHz to 8.5 GHz. A type of four stages charge pump is designed using this new Schottky diode model, the design charge pump can get efficiency of 40%.

Keywords

CMOS integrated circuits; Schottky diodes; UHF integrated circuits; integrated circuit modelling; microwave integrated circuits; semiconductor device models; CoSi₂-Si; frequency 0.05 GHz to 8.5 GHz; integrated SMIC 0.18 mum RF CMOS process; interdigital n-type CoSi₂-Si Schottky diode; metal plate; parasitic capacitance dielectric; size 0.18 mum; CMOS process; Charge pumps; Dielectric losses; Dielectric measurements; Frequency measurement; Parasitic capacitance; Radio frequency; Schottky diodes; Semiconductor device modeling; Voltage; Modeling; RF CMOS; RFID; Schottky diode;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2007. ASICON '07. 7th International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4244-1132-0

Electronic_ISBN

978-1-4244-1132-0

Type

conf

DOI

10.1109/ICASIC.2007.4415834

Filename

4415834