Blue/ultraviolet sensitive detector on <100> silicon membrane

Author

Purica, Munizer ; Budianu, Elena ; Elena, Manea

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

211

Abstract

In this paper, attention has been focused on two major aspects: fabrication of a low dark silicon photodiode with enhanced responsivity for blue/ultraviolet radiation (λ_∈ 200-400 μm) by arsenic diffusion, using as planar source arsenic doped oxide deposited by LPCVD on the active area, and development of a post process step for obtaining a <100> silicon membrane of ∼10 μm by using aqueous alkaline etching (KOH) without modifying the opto-electrical parameters of the photodiode structures.

Keywords

chemical vapour deposition; diffusion; elemental semiconductors; etching; membranes; micromachining; photodetectors; photodiodes; silicon; ultraviolet detectors; 10 micron; 200 to 400 micron; KOH; KOH aqueous alkaline etching; LPCVD; Si:As; active area; arsenic doped oxide; blue/ultraviolet sensitive detector; opto-electrical parameters; photodiode structures; planar arsenic diffusion source; post process step; responsivity; silicon <100> membrane; silicon photodiode; Biomembranes; Fabrication; Impurities; Infrared detectors; Optical surface waves; P-n junctions; Photodiodes; Radiation detectors; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105833

Filename

1105833