Title :
Investigation into sub-threshold performance of double-gate accumulation-mode SOI PMOSFET
Author :
Zhengfan, Zhang ; Zhaoji, Li ; Kaizhou, Tan ; Jiabin, Zhang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
In this paper, an analytical model of sub-threshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion´s equation and depletion approximation, and the relation of the sub-threshold swing with both the gate oxide capacitance and the interface trap density is obtained. The model is verified by experiment and by numerical simulation. Also an approach to extracting the interface trap density with sub-threshold swing is proposed.
Keywords :
MOSFET; Poisson equation; capacitance; semiconductor device models; silicon-on-insulator; Possion equation; SOI P-channel MOSFET; depletion approximation; double-gate accumulation-mode; gate oxide capacitance; sub-threshold swing; Analytical models; Equations; Integrated circuit technology; Isolation technology; MOSFET circuits; Numerical simulation; Parasitic capacitance; Performance analysis; Radiation hardening; Silicon;
Conference_Titel :
ASIC, 2007. ASICON '07. 7th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4244-1132-0
Electronic_ISBN :
978-1-4244-1132-0
DOI :
10.1109/ICASIC.2007.4415837
