Influence of the cabling geometry on paralleled diodes in a high power rectifier

Author

Clavel, E. ; Roudet, J. ; Schanen, J.-L. ; Foutanet, A.

Author_Institution

CNRS, Univ. Joseph Fourier, Grenoble, France

Volume

2

fYear

1996

fDate

6-10 Oct 1996

Firstpage

993

Abstract

In this paper, the relationship between wiring geometry and current unbalances of paralleled diodes in a high-current rectifier is studied. An electrical modelling of one arm of the rectifier is carried out, using lumped inductances computed from geometrical data. After electrical simulation, current unbalances in paralleled semiconductors are observed. An action on the incriminated bar geometry allows a reduction of these unbalances

Keywords

AC-DC power convertors; circuit analysis computing; power cables; power engineering computing; power semiconductor diodes; power semiconductor switches; rectifying circuits; semiconductor device models; software packages; switching circuits; InCa software; cabling geometry; circuit simulation; current unbalance; electrical modelling; geometrical data; high-current rectifier; lumped inductances; paralleled semiconductor diodes; Aluminum; Computational modeling; Computer simulation; Electrothermal effects; Finite element methods; Geometry; Lead compounds; Rectifiers; Semiconductor diodes; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE

Conference_Location

San Diego, CA

ISSN

0197-2618

Print_ISBN

0-7803-3544-9

Type

conf

DOI

10.1109/IAS.1996.560203

Filename

560203