International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

fYear

1998

fDate

6-9 Dec. 1998

Abstract

Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the original conference proceedings.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; DRAM chips; UHF transistors; display instrumentation; ferroelectric storage; flash memories; high electron mobility transistors; image sensors; integrated circuit interconnections; integrated circuit reliability; isolation technology; low-power electronics; micromechanical devices; microwave transistors; power semiconductor devices; quantum optics; silicon-on-insulator; single electron transistors; thin film transistors; BiCMOS; CMOS devices; DRAMs; FRAMs; HEMTs; MEMS; MOS physics; RF devices; SOI; TFTs; display technologies; flash memories; gate dielectrics; gate oxide reliability; high power devices; image sensors; interconnect modelling; isolation technology; low-voltage electronics; process modelling; quantum electronics; single electron devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746232

Filename

746232