DocumentCode
2571760
Title
Novel 3D SOI RF power MOSFET
Author
Pathirana, G.P.V. ; Udrea, F. ; Rusu, A.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
2
fYear
2002
fDate
2002
Firstpage
241
Abstract
In this paper we present simulated results of a novel silicon RF LDMOSFET on SOI technology based on a 3D structure. It has a breakdown voltage above 80 V and a cut-off frequency around 6.5 GHz. Application of the RESURF concept to the third dimension raises the device breakdown voltage and current handing capability leading to better RF performance.
Keywords
microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 3D structure LDMOSFET; 6.5 GHz; 80 V; MOSFET breakdown voltage; RESURF; SOI 3D RF power MOSFET; Si-SiO2; device RF performance; device current handing capability; transistor cut-off frequency; Cutoff frequency; Doping; Isolation technology; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power generation; Radio frequency; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105840
Filename
1105840
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