Title :
Novel 3D SOI RF power MOSFET
Author :
Pathirana, G.P.V. ; Udrea, F. ; Rusu, A.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In this paper we present simulated results of a novel silicon RF LDMOSFET on SOI technology based on a 3D structure. It has a breakdown voltage above 80 V and a cut-off frequency around 6.5 GHz. Application of the RESURF concept to the third dimension raises the device breakdown voltage and current handing capability leading to better RF performance.
Keywords :
microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; 3D structure LDMOSFET; 6.5 GHz; 80 V; MOSFET breakdown voltage; RESURF; SOI 3D RF power MOSFET; Si-SiO2; device RF performance; device current handing capability; transistor cut-off frequency; Cutoff frequency; Doping; Isolation technology; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power generation; Radio frequency; Silicon on insulator technology; Voltage;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105840
