Title :
Amorphous silicon TFT X-ray image sensors
Author_Institution :
dpiX, Xerox New Enterprise Co., Palo Alto, CA, USA
Abstract :
This paper will review electronic device characteristics of recently developed large-area, amorphous Silicon (a-Si) TFT/photodiode X-ray image sensors, and discuss some of the imaging characteristics which such devices can achieve.
Keywords :
X-ray imaging; amorphous semiconductors; elemental semiconductors; image sensors; photodiodes; silicon; thin film transistors; Si; X-ray image sensor; amorphous silicon TFT; electronic device; photodiode; Amorphous silicon; Dielectric thin films; Glass; Image sensors; Matrix converters; Nondestructive testing; Optical imaging; Photodiodes; Thin film transistors; X-ray imaging;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746237
