DocumentCode
2571836
Title
Amorphous silicon TFT X-ray image sensors
Author
Weisfield, R.L.
Author_Institution
dpiX, Xerox New Enterprise Co., Palo Alto, CA, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
21
Lastpage
24
Abstract
This paper will review electronic device characteristics of recently developed large-area, amorphous Silicon (a-Si) TFT/photodiode X-ray image sensors, and discuss some of the imaging characteristics which such devices can achieve.
Keywords
X-ray imaging; amorphous semiconductors; elemental semiconductors; image sensors; photodiodes; silicon; thin film transistors; Si; X-ray image sensor; amorphous silicon TFT; electronic device; photodiode; Amorphous silicon; Dielectric thin films; Glass; Image sensors; Matrix converters; Nondestructive testing; Optical imaging; Photodiodes; Thin film transistors; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746237
Filename
746237
Link To Document