• DocumentCode
    2571844
  • Title

    Study of a positive bevel angle edge termination for high voltage power structures

  • Author

    Hidalgo, S. ; Flores, D. ; Obieta, I. ; Mazarredo, I. ; Millán, J.

  • Author_Institution
    Centro Nacional de Microelectron., Bellaterra, Spain
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    261
  • Abstract
    This paper provides an extensive analysis of power diodes with a MESA structure edge termination as a function of the main geometrical and technological parameters. The effect of the fixed charge density inherent in the MESA groove filling material is also considered. 2D simulations have been carried out to show the dependence on each parameter and to determine the location of the breakdown point. Fagor commercial MESA power diodes have been used to corroborate the optimisation of the voltage capability.
  • Keywords
    optimisation; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; semiconductor device packaging; semiconductor device reliability; 1000 V; MESA groove filling material fixed charge density; MESA structure power diodes; breakdown point location; high voltage power structures; positive bevel angle edge termination; voltage capability optimisation; Cathodes; Diodes; Doping; Electric breakdown; Glass; Leakage current; Packaging; Passivation; Resins; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2002. CAS 2002 Proceedings. International
  • Print_ISBN
    0-7803-7440-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2002.1105845
  • Filename
    1105845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2571844