• DocumentCode
    2571859
  • Title

    RF vertical MOSFET utilizing power trench® technology for 50V operation

  • Author

    Wilson, P.H.

  • Author_Institution
    Discrete Power Technol. Group, Fairchild Semicond., San Jose, CA, USA
  • Volume
    2
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    265
  • Abstract
    The vertical DMOS RF amplifier employs power trench technology to achieve 50 V operation. This paper discusses results from a study of a high breakdown voltage RF device, which can achieve a power per active area of 280 W/mm2, at an operating voltage of 50 V and a power density of 100 W/mm2 at an operating voltage of 28 V.
  • Keywords
    UHF field effect transistors; isolation technology; power MOSFET; semiconductor device breakdown; semiconductor device measurement; 2110 MHz; 28 V; 50 V; 900 MHz; RF vertical MOSFET; VDMOS power density; breakdown voltage; device operating voltage; high breakdown voltage RF devices; power per active area; power trench technology; vertical DMOS RF amplifiers; Base stations; Breakdown voltage; Costs; Electrodes; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2002. CAS 2002 Proceedings. International
  • Print_ISBN
    0-7803-7440-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2002.1105846
  • Filename
    1105846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2571859